Methods for forming backside illuminated image sensors with front side metal redistribution layers

ABSTRACT

Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.

This application is a divisional application of non-provisional patentapplication Ser. No. 13/112,871, filed May 20, 2011, which claims thebenefit of provisional patent application No. 61/438,225, filed Jan. 31,2011, which is hereby incorporated by reference herein in its entirety.

BACKGROUND

This relates generally to imaging devices, and more particularly, toimaging devices having backside illuminated image sensors withredistribution layers.

Image sensors are commonly used in electronic devices such as cellulartelephones, cameras, and computers to capture images. Conventional imagesensors are fabricated on a semiconductor substrate using complementarymetal-oxide-semiconductor (CMOS) technology or charge-coupled device(CCD) technology. The image sensors may include photodiodes and otheroperational circuitry such as transistors formed in a front surface ofthe substrate. A dielectric stack is formed on the front surface of thesubstrate directly on top of the photodiodes. The dielectric stackincludes metal routing lines and metal vias formed in dielectricmaterial.

A color filter array is formed over the dielectric stack to provide eachpixel with sensitivity to a certain range of wavelengths. Microlensesmay be formed over the color filter array. Light enters from a frontside of the image sensor (i.e., light enters the microlenses and travelsthrough the color filters into the dielectric stack). An image sensorused in this way is referred to as a frontside illumination (FSI) imagesensor. Because the light must pass through the metal routing lines andmetal vias of the dielectric stack in an FSI image sensor, internalreflections within the dielectric stack may cause cross-talk betweenneighboring image sensors. The size of photosensitive elements in an FSIimage sensor is limited due to the space required for routing lines,etc. in the dielectric stack in front of the photosensitive elements.

To address these issues, backside illumination (BSI) image sensors havebeen developed. In conventional BSI image sensors, microlenses may beformed on the back surface of the substrate on the opposite side of thephotodiodes from the dielectric stack. In a typical arrangement, a colorfilter array is formed under the microlenses on the back surface of thesubstrate to provide each pixel with sensitivity to a certain range ofwavelengths. Light enters from the back side of the image sensor (i.e.,light enters the microlenses and travels through the color filters ontothe photodiodes).

In a conventional BSI image sensor, metal routing lines are coupled tobond pads on the front side of the dielectric stack. Bond pads arecoupled to external circuitry with wire bonds. Lower cost, higherefficiency manufacturing and compact packaging of BSI imager sensors maybe achieved by coupling bond pads to external circuitry using solderballs attached to the front surface of a thinned semiconductor substratein a wafer level packaging process, prior to singulation of the waferinto individual die.

It would therefore be desirable to provide a method of forming a ballgrid array on the front side of a BSI image sensor capable of handingthinned semiconductor substrates for wafer level packaging.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional side view of a conventional backsideillumination image pixel array.

FIG. 2A is a cross-sectional side view of an illustrative image waferfor use in a backside illuminated image sensor having a redistributionlayer and solder bumps in accordance with an embodiment of the presentinvention.

FIG. 2B is a cross-sectional side view of the illustrative image waferof FIG. 2A after formation of a redistribution layer on the front sidein accordance with an embodiment of the present invention.

FIG. 2C is a cross-sectional side view of the illustrative image waferof FIG. 2B with a temporary carrier attached to the redistribution layerin accordance with an embodiment of the present invention.

FIG. 3A is a cross-sectional side view of the illustrative image waferof FIG. 2C after thinning the image wafer in accordance with anembodiment of the present invention.

FIG. 3B is a cross-sectional side view of the illustrative image waferof FIG. 3A after formation of backside illumination elements on the backside in accordance with an embodiment of the present invention.

FIG. 4A is a cross-sectional side view of the illustrative image waferof FIG. 3B after attaching a cover layer on the back side in accordancewith an embodiment of the present invention.

FIG. 4B is a cross-sectional side view of the illustrative image waferof FIG. 4A after detaching the temporary carrier in accordance with anembodiment of the present invention.

FIG. 5 is a cross-sectional side view of an illustrative backsideilluminated image sensor having a redistribution layer and solder bumpsin accordance with an embodiment of the present invention.

FIG. 6 is a flowchart of illustrative steps for producing a backsideilluminated image sensor having a redistribution layer and solder bumpsin accordance with an embodiment of the present invention.

FIG. 7A is a cross-sectional side view of an illustrative image waferfor use in a backside illuminated image sensor having a redistributionlayer and solder bumps in accordance with an embodiment of the presentinvention.

FIG. 7B is a cross-sectional side view of the illustrative image waferof FIG. 7A after attaching a permanent carrier on the front side inaccordance with an embodiment of the present invention.

FIG. 7C is a cross-sectional side view of the illustrative image waferof FIG. 7B after thinning the permanent carrier in accordance with anembodiment of the present invention.

FIG. 8A is a cross-sectional side view of the illustrative image waferof FIG. 7C after formation of a first passivation layer on the permanentcarrier in accordance with an embodiment of the present invention.

FIG. 8B is a cross-sectional side view of the illustrative image waferof FIG. 8A after formation of a second passivation layer in openings inthe first passivation layer and the permanent carrier in accordance withan embodiment of the present invention.

FIG. 9A is a cross-sectional side view of the illustrative image waferof FIG. 8B after formation of a metallization layer in accordance withan embodiment of the present invention.

FIG. 9B is a cross-sectional side view of the illustrative image waferof FIG. 9A having a redistribution layer on the permanent carrier inaccordance with an embodiment of the present invention.

FIG. 10A is a cross-sectional side view of the illustrative image waferof FIG. 9B after attaching a temporary carrier to the redistributionlayer in accordance with an embodiment of the present invention.

FIG. 10B is a cross-sectional side view of the illustrative image waferof FIG. 10A after thinning the image wafer in accordance with anembodiment of the present invention.

FIG. 11A is a cross-sectional side view of the illustrative image waferof FIG. 10B after formation of backside illumination elements on theback side of the image wafer in accordance with an embodiment of thepresent invention.

FIG. 11B is a cross-sectional side view of the illustrative image waferof FIG. 11A after attaching a cover layer to the back side of the imagewafer and detaching the temporary carrier in accordance with anembodiment of the present invention.

FIG. 12 is a cross-sectional side view of an illustrative backsideilluminated image sensor having a redistribution layer and solder bumpsin accordance with an embodiment of the present invention.

FIG. 13 is a flowchart of illustrative steps for producing a backsideilluminated image sensor having a redistribution layer and solder bumpsin accordance with an embodiment of the present invention.

FIG. 14A is a cross-sectional side view of an illustrative image waferfor use in a backside illuminated image sensor having a redistributionlayer and solder bumps in accordance with an embodiment of the presentinvention.

FIG. 14B is a cross-sectional side view of the illustrative image waferof FIG. 14A after attaching a permanent carrier on the front side inaccordance with an embodiment of the present invention.

FIG. 14C is a cross-sectional side view of the illustrative image waferof FIG. 14B after thinning the image wafer in accordance with anembodiment of the present invention.

FIG. 15A is a cross-sectional side view of the illustrative image waferof FIG. 14C after formation of backside illumination elements on theback side of the image wafer in accordance with an embodiment of thepresent invention.

FIG. 15B is a cross-sectional side view of the illustrative image waferof FIG. 15A after attaching a temporary carrier to the back side of theimage wafer in accordance with an embodiment of the present invention.

FIG. 15C is a cross-sectional side view of the illustrative image waferof FIG. 15B after thinning the permanent carrier in accordance with anembodiment of the present invention.

FIG. 16A is a cross-sectional side view of the illustrative image waferof FIG. 15C after formation of a first dielectric layer on the permanentcarrier in accordance with an embodiment of the present invention.

FIG. 16B is a cross-sectional side view of the illustrative image waferof FIG. 16A after formation of a second passivation layer in openings inthe first passivation layer and the permanent carrier in accordance withan embodiment of the present invention.

FIG. 17A is a cross-sectional side view of the illustrative image waferof FIG. 16B after formation of a metallization layer in accordance withan embodiment of the present invention.

FIG. 17B is a cross-sectional side view of the illustrative image waferof FIG. 17A having a redistribution layer in accordance with anembodiment of the present invention.

FIG. 18A is a cross-sectional side view of the illustrative image waferof FIG. 17B after detaching the temporary carrier from the image waferin accordance with an embodiment of the present invention.

FIG. 18B is a cross-sectional side view of an illustrative backsideilluminated image sensor having a redistribution layer and solder bumpsin accordance with an embodiment of the present invention.

FIG. 19 is a flowchart of illustrative steps for producing a backsideilluminated image sensor having a redistribution layer and solder bumpsin accordance with an embodiment of the present invention.

DETAILED DESCRIPTION

Digital camera modules are widely used in electronic devices such asdigital cameras, computers, cellular telephones, or other electronicdevices. These electronic devices may include image sensors that receiveincoming light to capture an image. The image sensors may include arraysof image pixels. The pixels in the image sensors may includephotosensitive elements such as photodiodes that convert the incominglight into digital data. Image sensors may have any number of pixels(e.g., hundreds or thousands or more). A typical image sensor may, forexample, have millions of pixels (e.g., megapixels).

FIG. 1 is a cross-sectional side view of an image pixel array 10. Pixelarray 10 includes conventional backside illumination image pixelsarranged in an array. Each pixel has a photodiode 14 formed in a frontside of a silicon substrate 12. Each pixel also has an associatedfloating diffusion region 16 formed in the front side of substrate 12.

A dielectric stack 20 is formed on front surface 13 of substrate 12.Dielectric stack 20 includes metal interconnect structures 22 formed indielectric material (e.g., silicon dioxide). Metal interconnectstructures may include metal routing lines and metal vias in theinterlevel dielectric (ILD) layers. Conductive bond pads 30 are formedon dielectric stack 20 and coupled to interconnect structures 22.

A color filter array 26 is formed on back surface 15 of substrate 12. Arespective microlens 28 covers each color filter pixel element 26. Lightcan enter from the back side of the image pixels through microlenses 28.The incoming light is absorbed by photodiode 14. Conventional BSI imagesensors such as pixel array 10 are coupled to external circuitry usingwire bonds such as wire bonds 32. Wire bonds 32 may be electricallycoupled to bond pads 30.

FIGS. 2A, 2B, and 2C are cross-sectional side views of an illustrativeBSI image sensor having a metal redistribution layer for providingsolder bumps for connecting to external circuitry in variousmanufacturing stages. As shown in FIG. 2A, a semiconductor substrate(e.g., a silicon wafer, also sometimes referred to as an image wafer)such as substrate 102 may be provided with conductive bond pads 104 andimage pixels 100. Image pixels 100 may include a photosensor, a floatingdiffusion region, readout circuitry, etc. Image pixels 100 may be formedon a side of a semiconductor substrate such as front side 101 ofsemiconductor substrate 102. Semiconductor substrate 102 may also havecontrol circuitry formed on front side 101.

Conductive bond pads 104 may be formed from aluminum, copper or othersuitable conductive material. As shown in FIG. 2B, a redistributionlayer (RDL) such as redistribution layer 106 may be formed on front side101 of image wafer 102. RDL layer 106 may be provided to reposition theelectrical contacts of an image sensor (e.g., to provide electricalcontacts such as contacts 114 at a different location from the locationof bond pads 104 for coupling to external circuitry). RDL layer 106 maybe comprised of one or more patterned passivation layers such asdielectric layers 108 and 110 of RDL layer 106. Dielectric layers 108and 110 may be formed form any suitable dielectric (e.g., nitride,polyimide or other suitable materials).

A first dielectric layer such as dielectric layer 108 may be patternedso as to have openings over bond pads 104. RDL 106 may also includepatterned metallization layer such as metallization layer 112.Metallization layer may be formed from any suitable conductive materialor combination of conductive materials (e.g., titanium, copper, nickel,palladium etc.). Metallization layer 112 may be patterned to contactbond pads 104 through openings in dielectric layer 108. Metallizationlayer 112 may run along the front surface of dielectric layer 108 asshown in FIG. 2B. RDL 106 may also include a second patterned dielectriclayer such as dielectric layer 110 formed on top of dielectric layer 108and metallization layer 112. Dielectric layer 110 may be patternedhaving openings such as openings 114 that provide electrical contactwith metallization layer 112 and bond pads 104. Openings 114 may provideelectrical contacts for an image sensor in a redistributed pattern withrespect to the pattern of bond pads 104.

As shown in FIG. 2C, a temporary carrier such as carrier 122 may beattached to the front side of redistribution layer 106 using a temporaryadhesive layer such as adhesive layer 120. Carrier 122 may be made fromsilicon, another material or a combination of other suitable materials.

FIG. 3A and FIG. 3B are cross-sectional side views of an illustrativeBSI image sensor having a metal redistribution layer for providingsolder bumps for connecting to external circuitry in two latermanufacturing stages. As shown in FIG. 3A, semiconductor substrate 102may be thinned to a thickness 130 suitable for an image sensor array.Thinning of image wafer 102 to thickness 130 may be done by any suitablemethod (e.g., back grinding, polishing, wet etching, dry etching, etc.)Thickness 130 of thinned semiconductor substrate 130 may, as an example,be between 2.0 microns and 2.5 microns, may be less than 2.0 microns ormay be larger than 2.5 microns. Once thinned, image wafer 102 may have aback side such as back side 103 of FIG. 3A.

As shown in FIG. 3B, following thinning of image wafer 102 to desiredthickness 130, a backside illumination and color filter array processingstep is performed. In a typical backside illumination process, a dopedsilicon layer may be deposited on back side 103 of image wafer 102.Following deposition of the doped silicon layer, the doped silicon layermay be laser annealed using laser radiation of ultraviolet to bluecolor. Laser annealing may be accomplished with other colors of laserlight such as red laser light, etc. Laser annealing of the doped siliconlayer produces a doped region near back side 103 of image wafer 102.Additional layers such as antireflective layers may be deposited on backside 103 of image wafer 102.

A color filter array having color filters 142 may be formed on backsurface 103 of substrate 102. Each color filter 142 may serve to filterincoming light for a respective image pixel 100. Color filters 142 mayinclude green filters, red filters, blue filters, yellow filters, cyanfilters, magenta filters, or other types of filters. As an example, agreen filter passes green light (e.g., light with wavelengths from 495nm to 570 nm) and reflects and/or absorbs light out of that range (e.g.,the green filter reflects red light and blue light).

An example of a color filter array pattern that may be used is the GRBG(green-red-blue-green) Bayer pattern. In this type of configuration, thecolor filter array is arranged into groups of four color filters. Ineach group, two of the four color filters are green filters, one of thefour color filters is a red filter, and the remaining color filter is ablue filter. If desired, other color filter array patterns may be used.

An array of microlenses such as microlenses 140 may be formed on eachrespective color filter 142 from the back side of image wafer 102. Eachmicrolens may be used to concentrate incoming light onto one associatedimage pixels 100. As shown in FIG. 3B, a portion of back side 103 ofimage wafer 102 may be coated in a light blocking material such as lightblocking material 144 (i.e., a material that absorbs infrared andvisible wavelengths of light). If needed, alignment marks 146 may beopened in the silicon to align backside elements such as microlenses 140and color filters 142 with frontside elements such as image pixels 100.

FIG. 4A and FIG. 4B are cross-sectional side views of an illustrativeBSI image sensor having a metal redistribution layer for providingsolder bumps for connecting to external circuitry in two even latermanufacturing stages. As shown in FIG. 4A, a rigid cover layer such ascover layer 150 is mounted over the array of color filters 142. Inmounting cover layer 150, a photo-definable dry film adhesive layer suchas dry film adhesive 152 is applied to back side 103 of image wafer 102covering microlenses 140 and color filters 142. Portions of dry filmadhesive 152 in the vicinity of microlenses 140 and color filters 142are then removed (i.e., photo-defined) to provide opening 160 over thearray of microlenses 140. Cover layer 150 may then be attached to theremaining portions of dry film adhesive 152.

As shown in FIG. 4B, temporary carrier 122 may then be removed. Carrier122 may be removed by thermal shear de-bonding, mechanical twistde-bonding or other suitable de-bonding methods. Following removal ofcarrier 122, remaining adhesive 120 may be removed using, as an example,a chemical solvent (e.g., IPA and acetone).

FIG. 5 is cross-sectional a side view of an illustrative BSI imagesensor having a metal redistribution layer and solder bumps forconnecting to external circuitry in its final manufacturing stage.Following removal of carrier 122 and adhesive 120 as described inconnection with FIG. 4B, solder bumps 170 may, if desired, be attachedto image sensor 200. BSI image sensor 200 may be provided without solderballs 170 allowing a user of BSI image sensor 200 to form wire bonds,metal bonds or other electrical contacts in contact with metallizationlayer 112 in openings 114. Attaching solder bumps 170 (sometime referredto herein as solder balls) to image sensor 200 may be performed byscreen printing solder paste into openings 114 in dielectric layer 110onto metallization layer 112. Solder bumps 170 are then formed byreflowing (i.e., heating until melted) the solder paste to form solderballs. Alternatively, solder balls may be formed in openings 114 usingball drop, solder shooting, or other solder deposition methods. Thewafer is then singulated into individual dies. The completed backsideilluminated image sensor 200 having solder balls 170, as shown in theexample of FIG. 5, includes a cover layer 150. Cover layer 150 may beformed from glass, plastic or other suitably transparent material. Coverlayer 150 is mounted to dry film adhesive 152. Dry film adhesive 152attaches cover layer 150 to back side 103 of image wafer 102.

In the final configuration shown (as an example) in FIG. 5, image wafer102 includes control circuitry and an array of image pixels 100 on afront side and an associated array of color filters 142 and anassociated array of microlenses 140 on a back side. Image light 800 maybe received through cover layer 150, microlenses 140 and color filters142 on back side 103 of image wafer 102 before being absorbed by imagepixels 100 mounted on front side 101 of image wafer 102. Behind imagepixels 100, a redistribution layer such as redistribution layer 106 maybe mounted to front side 101 of image wafer 102. Redistribution layer106 may include dielectric layer 110, metallization layer 112 andphoto-definable dielectric layer 108. Dielectric layers 108 and 110 maybe formed from a dry film photo-resistive material or a spin-onphoto-resistive material, or other suitable dielectric material. Theexample of FIG. 5 is merely illustrative and other embodiments arepossible.

FIG. 6 is a flowchart showing illustrative steps for producing BSI imagesensors having solder bumps and metal redistribution layers. As shown inprocess 200 of FIG. 6, at step 201, a redistribution layer (RDL) isformed on a front side such as front side 101 of an image wafer such assemiconductor substrate 102 of FIG. 2A. At step 202, a temporary carrieris attached to the RDL using an adhesive layer such as adhesive layer120 of FIG. 2C. At step 203, the image wafer (silicon substrate) is backgrinded to a desired thickness such as thickness 130 of FIG. 3A. At step204, the image wafer may optionally be further thinned using a siliconwet etch. At step 205, a back side of the image wafer such as back side103 of image wafer 102 of FIG. 3B is further prepared for backsideillumination of photosensors on front side 103 of image wafer 102 usinga standard BSI process.

As described in connection with FIG. 3B, a standard BSI process mayinclude silicon doping, laser annealing, light block deposition andopening of alignment marks such as alignment marks 146 of FIG. 3B.Following BSI processing, a color filter array (CFA) may be formed onback side 103 of image wafer 102. Microlenses such as microlenses 140 ofFIG. 3B may then be formed over the color filter array on back side 103of image wafer 102. Formation of the color filter array (CFA) andmicrolenses may sometimes be referred to herein as a CFA/glens process.Following the CFA/microlens process, at step 207, a cover layer(sometimes referred to as a cover glass) such as cover layer 150 may beattached to back side 103 of image wafer 102 covering color filters 142of the CFA.

As described in connection with FIG. 4A, cover layer 150 may also beformed from other transparent materials such as plastic. Cover layer 150may be attached to image wafer 102 using a patterned adhesive film suchas patterned dry film adhesive 152 of FIG. 4B. Following attaching coverglass 150, at step 208, the temporary carrier attached in step 202 maybe removed using thermal shear or other de-bonding methods. At step 209,solder bumps such as solder bumps 170 of FIG. 5 may, if desired, beformed in openings 114 in order to provide electrical contact withmetallization layer 112 of redistribution layer 106 and therefore withbond pads 104. At step 210, the image wafer is singulated intoindividual dies.

FIGS. 7A, 7B, and 7C are cross-sectional side views of anotherillustrative embodiment of a BSI image sensor having a metalredistribution layer for providing solder bumps for connecting toexternal circuitry in various manufacturing stages. As shown in FIG. 7A,as in FIG. 2A, substrate 102 may be provided with conductive bond pads104 and image pixels 100 formed on front side 101 of semiconductorsubstrate 102. Semiconductor substrate 102 may also have controlcircuitry formed on front side 101

As shown in FIG. 7B, a permanent carrier such as carrier 300 may beattached to front side 101 of image wafer 102 using a permanent adhesivelayer such as adhesive layer 302. Carrier 300 may be made from silicon,another material or a combination of other suitable materials. Adhesivelayer 302 may be formed from a photo-definable dry film adhesive.Adhesive layer 302 may be patterned (i.e., photo-defined) to provideopenings 304 in adhesive layer 302 for later access to metal bond pads104. In an alternative arrangement, carrier 300 may be attached directlyto image wafer 102 using an oxide-oxide bonding process (i.e. and oxidelayer on carrier 300 may be bonded to a thin layer of oxide applied toimage wafer 102). If an oxide-oxide bonding process is used, openings304 may be formed at a later stage of manufacture than that shown inFIG. 7B. Carrier 300 may also, if desired, be attached to front side 101of image wafer 102 using another permanent adhesive. Adhesive layer 302may be spun on, sprayed on, screen printed, dry laminated or may beapplied by another suitable process.

As shown in FIG. 7C, following attaching permanent carrier 300 to imagewafer 102, carrier 300 may be thinned to a thickness 310. Thickness 310may be between 80 microns and 100 microns or may be any other thicknessthat provides strength to the assembly while allowing formation ofthrough-silicon vias as shown in subsequent figures. Carrier 300 may bethinned using any suitable thinning process such as those described inconnection with FIG. 3A.

FIGS. 8A, 8B, 9A, and 9B are cross-sectional side views of theillustrative embodiment shown in FIG. 7C, of a BSI image sensor having ametal redistribution layer for providing solder bumps for connecting toexternal circuitry in later manufacturing stages in which aredistribution layer is added front side 101 of image wafer 102. FIG. 8Ashows addition of a first passivation layer such as passivation layer310 on top of permanent carrier 300. Passivation layer 310 may be formedof any suitable permanent photo-definable dielectric. Permanentphoto-definable dielectrics may be thermosetting dielectrics (i.e.,dielectrics that cure upon application of heat).

Dielectric layer 310 may, as shown in FIG. 8A, be patterned so as tohave openings such as openings 314 over bond pads 104. In the samepatterning step, openings 314 may be extended into silicon carrier 310in order to expose bond pads 104.

As shown in FIG. 8B, a second passivation layer such as passivationlayer 312 may be added to sidewalls 316 of openings 314. Passivationlayer 312 may be a spin on dielectric, a chemical vapor depositeddielectric or other dielectric. Passivation layer 312 may be formed onsidewalls 316 of opening 314 by spinning on a dielectric then using aphoto-defining procedure to remove material from the bottom of openings314. If passivation layer 312 is not photo-definable, dielectricmaterial may be removed from the bottom of openings 314 using a blanketdry etch process.

FIG. 9A shows a subsequent step in the formation of a RDL on front side101 of image wafer 102. As shown in FIG. 9A, a patterned metallizationlayer such as metallization layer 320 may be formed over passivationlayer 310. Metallization layer 320 may be formed from any suitableconductive material or combination of conductive materials (e.g.,titanium, copper, nickel, palladium etc.). Metallization layer 320 maybe patterned to contact bond pads 104 through openings 316 in dielectriclayer 312 and silicon carrier 300 forming through-silicon vias such asthrough-silicon vias 316.

As shown in FIG. 9B, a redistribution layer such as RDL 322 may includea third patterned dielectric layer such as dielectric layer 330 formedon top of dielectric layer 310 and metallization layer 320. Dielectriclayer 330 may be patterned having openings such as openings 324 thatprovide access to metallization layer 320 in order to provide electricalcontact bond pads 104. Openings 324 may provide electrical contacts in aredistributed pattern with respect to the pattern of bond pads 104(i.e., the location of openings 324 define where solder balls willultimately be placed). Third passivation layer 330 may have lightblocking properties (e.g., infrared absorption) in order to preventlight from front side 101 of image wafer 102 from reaching image pixels100. Passivation layer 330 may be formed from a single dielectricmaterial or may be made of multiple layers including a dry film laminatedielectric and a photo-definable infrared-blocking coating.

In the example of FIG. 9B, redistribution layer 322 includes firstpassivation layer 310, second dielectric passivation layer 312,metallization layer 320, and third passivation layer 330. RDL 322 mayinclude through-silicon vias 316 through silicon carrier 300.

FIGS. 10A, 10B, and 11A are cross-sectional side views of theillustrative embodiment shown in FIG. 7C, of a BSI image sensor having ametal redistribution layer for providing solder bumps for connecting toexternal circuitry in later manufacturing stages in which backsideillumination elements are added to back side 103 of image wafer 102. Asshown in FIG. 10A, an adhesive layer such as adhesive layer 340 may beused to attach a temporary silicon carrier such as carrier 342 to RDL322. As described in connection with FIG. 3A, in the example of FIG.10B, semiconductor substrate 102 may be thinned to a thickness 130suitable for backside illumination of image pixels 100. Once thinned,image wafer 102 may have a back side such as back side 103 of FIG. 10B.

As shown in FIG. 11A, following thinning of image wafer 102 to desiredthickness 130, a backside illumination and color filter array processingstep is performed as described in connection with FIG. 3B. Following BSIand CFA formation processes, as shown in FIG. 11A, image wafer 102 maybe provided with a color filter array having color filters 142 formed onback surface 103 of substrate 102. Image wafer 102 may also have arrayof microlenses such as microlenses 140 formed on each respective colorfilter 142 from the back side of image wafer 102. Each microlens 140 maybe used to concentrate incoming light onto one associated image pixels100 through one associated color filter 142. As shown in FIG. 11A, aportion of back side 103 of image wafer 102 may be coated in a lightblocking material such as light blocking material 144. If needed,alignment marks 146 may be opened in the silicon to align backsideelements such as microlenses 140 and color filters 142 with front sideelements such as image pixels 100.

FIG. 11B is cross-sectional side view of an illustrative BSI imagesensor having a metal redistribution layer for providing solder bumpsfor connecting to external circuitry in a later manufacturing stage. Asshown in FIG. 11B, a rigid cover layer such as cover layer 150 ismounted over the array of color filters 142. In mounting cover layer150, a photo-definable dry film adhesive layer such as dry film adhesive152 is applied to back side 103 of image wafer 102 covering microlenses140 and color filters 142. Portions of dry film adhesive 152 in thevicinity of microlenses 140 and color filters 142 are then removed(i.e., photo-defined) to provide opening 160 over the array ofmicrolenses 140. Cover layer 150 may then be attached to the remainingportions of dry film adhesive 152.

As shown in FIG. 11B, temporary carrier 342 may also be removed. Carrier342 may be removed by thermal shear de-bonding, mechanical twistde-bonding or other suitable de-bonding methods. Following removal ofcarrier 342, remaining adhesive 340 may be removed using, as an example,a chemical solvent (e.g., IPA and acetone).

FIG. 12 is cross-sectional side view of an illustrative BSI image sensorhaving a metal redistribution layer for providing solder bumps forconnecting to external circuitry in its final manufacturing stage.Following removal of carrier 342 and adhesive 340 as described inconnection with FIG. 11B, solder bumps 170 may, if desired, be attachedto BSI image sensor 400. BSI image sensor 400 may be provided withoutsolder balls 170 allowing a user of BSI image sensor 400 to form wirebonds, metal bonds or other electrical contacts in contact withmetallization layer 320 in openings 324. Attaching solder bumps 170 toimage sensor 400 may be performed by screen printing solder paste intoopenings 324 in dielectric layer 330 onto metallization layer 320.Solder bumps 170 are then formed by reflowing (i.e., heating untilmelted) the solder paste to form solder balls. Alternatively, solderballs may be formed in openings 114 using ball drop, solder shooting, orother solder deposition methods. The wafer is then singulated intoindividual dies. The completed backside illuminated image sensor 400having solder balls 170, as shown in the example of FIG. 12, includes acover layer 150 attached to back side 103 of image wafer 102 using dryfilm adhesive 152.

In the final configuration shown (as an example) in FIG. 12, BSI imagesensor 400 includes image wafer 102, cover layer 150, permanent carrier300, redistribution layer 322 and solder balls 170. Image wafer imagewafer 102 includes control circuitry and an array of image pixels 100 ona front side and an associated array of color filters 142 and anassociated array of microlenses 140 on a back side. Image light 800 maybe received through cover layer 150, microlenses 140 and color filters142 on back side 103 of image wafer 102 before being absorbed by imagepixels 100 mounted on front side 101 of image wafer 102. Behind imagepixels 100, a redistribution layer such as redistribution layer 322 maybe mounted to front side 101 of image wafer 102. Redistribution layer322 may include dielectric layer 310, second dielectric layer 312,metallization layer 320 and third dielectric layer 330. Dielectriclayers 310, 312, and 330 may be formed from a dry film photo-resistivematerial, a spin-on photo-resistive material, or other suitabledielectric material. The example of FIG. 12 is merely illustrative andother embodiments are possible.

FIG. 13 is a flowchart showing illustrative steps for producing BSIimage sensors having solder bumps and metal redistribution layers. Asshown in process 500 of FIG. 13, at step 501, a permanent carrier suchas carrier 300 of FIG. 7B may be attached to image wafer 102 usingadhesive layer 302. At step 502, carrier 300 is thinned as described inconnection with FIG. 7C. At step 503, openings such as openings 314 ofFIG. 8A are formed by photo-defining carrier 300 and, if desired, afirst passivation layer applied to carrier 300 such as passivation layer310 of FIG. 8A. Openings 314 may allow formation of through-silicon viasfor connecting bond pads such as bond pads 104 of FIG. 8A to othercomponents. At step 504, as described in connection with FIG. 8B, asecond passivation layer such as passivation layer 312 may be applied tosidewalls 316 of openings 314. At step 505, photo-definition or dryetching may be used to remove dielectric 312 from the bottom of openings314. At step 506, a metallization layer such as layer 320 of FIG. 9A maybe formed on dielectric layer 310. At step 507, a third passivationlayer such as passivation layer 330 may be applied on top ofmetallization layer 320 and dielectric layer 310. Passivation layer 330may fill in through-silicon vias 316 and cover metallization layer 320of redistribution layer 322. At step 507, passivation layer 330 mayalso, if desired, be photo-defined to provide openings 324. At step 508a temporary carrier such as carrier 342 is attached to RDL 322 using anadhesive layer such as adhesive layer 340 of FIG. 10A. At step 509, theimage wafer (silicon substrate) is back grinded to a desired thicknesssuch as thickness 130 of FIG. 10B. At step 510, the image wafer mayoptionally be further thinned using a silicon wet etch. At step 511, aback side of the image wafer such as back side 103 of image wafer 102 ofFIG. 3B is further prepared for backside illumination of photosensors onfront side 103 of image wafer 102 using a standard BSI process.

Following BSI processing in step 511, at step 512 a color filter array(CFA) may be formed on back side 103 of image wafer 102. Microlensessuch as microlenses 140 of FIG. 11A may then be formed over the colorfilter array on back side 103 of image wafer 102 in a CFA/μlens process.Following the CFA/microlens process, at step 513, a cover layer(sometimes referred to as a cover glass) such as cover layer 150 may beattached to back side 103 of image wafer 102 covering color filters 142of the CFA. At step 515, the image wafer is singulated into individualdies.

As described in connection with FIG. 4A, cover layer 150 may also beformed from other transparent materials such as plastic. Cover layer 150may be attached to image wafer 102 using a patterned adhesive film suchas patterned dry film adhesive 152 of FIG. 11B. Following attachingcover glass 150, at step 514, the temporary carrier attached in step 202may be removed using thermal shear or other de-bonding methods. At step515, solder bumps such as solder bumps 170 of FIG. 12 may be formed inopenings 324 in order to provide electrical contact with metallizationlayer 320 of redistribution layer 322 and therefore with bond pads 104.

FIGS. 14A-C, 15A-C, 16A, 16B, 17A, 17B, 18A, and 18B are cross-sectionalside views of another illustrative embodiment of a BSI image sensorhaving a metal redistribution layer for providing solder bumps forconnecting to external circuitry in various manufacturing stages.

As shown in FIG. 14A, as in FIG. 7A, substrate 102 may be provided withconductive bond pads 104 and image pixels 100 formed on front side 101of semiconductor substrate 102. Semiconductor substrate 102 may alsohave control circuitry formed on front side 101. As shown in FIG. 14B, apermanent carrier such as carrier 300 may be attached to front side 101of image wafer 102 using a permanent adhesive layer such as adhesivelayer 302. Adhesive layer 302 may be patterned (i.e., photo-defined) toprovide openings 304 in adhesive layer 302 for later access to metalbond pads 104. In an alternative arrangement, carrier 300 may beattached directly to image wafer 102 using an oxide-oxide bondingprocess (i.e. and oxide layer on carrier 300 may be bonded to a thinlayer of oxide applied to image wafer 102). If an oxide-oxide bondingprocess is used, openings 304 may be formed at a later stage ofmanufacture than that shown in FIG. 7B. Carrier 300 may also, ifdesired, be attached to front side 101 of image wafer 102 using anotherpermanent adhesive.

As shown in FIG. 14C, following attaching permanent carrier 300 to imagewafer 102, semiconductor substrate 102 may be thinned to a thickness 130suitable for backside illumination of image pixels 100. Once thinned,image wafer 102 may have a back side such as back side 103 of FIG. 14C.

As shown in FIG. 14C, following thinning of image wafer 102 to desiredthickness 130, a backside illumination and color filter array processingstep is performed as described in connection with FIG. 3B. Following BSIand CFA formation processes, as shown in FIG. 15A, image wafer 102 maybe provided with a color filter array having color filters 142 formed onback surface 103 of substrate 102. Image wafer 102 may also have arrayof microlenses such as microlenses 140 formed on each respective colorfilter 142 from the back side of image wafer 102. Each microlens 140 maybe used to concentrate incoming light onto one associated image pixels100 through one associated color filter 142.

FIG. 15A shows manufacturing stage in which backside illuminationelements are added to back side 103 of image wafer 102. As shown in FIG.15A, a portion of back side 103 of image wafer 102 may be coated in alight blocking material such as light blocking material 144. If needed,alignment marks 146 may be opened in the silicon to align backsideelements such as microlenses 140 and color filters 142 with front sideelements such as image pixels 100.

As shown in FIG. 15B, an adhesive layer such as adhesive layer 602 maybe used to attach a temporary silicon carrier such as carrier 600 toback side 103 of image wafer 102. As shown in FIG. 15C, carrier 300 maybe thinned to a thickness 310. Thickness 310 may be between 80 micronsand 100 microns or may be any other thickness that provides strength tothe assembly while allowing formation of through-silicon vias as shownin subsequent figures. Carrier 300 may be thinned using any suitablethinning process such as those described in connection with FIG. 3A.

FIGS. 16A, 16B, 17A, and 17B are cross-sectional side views of theillustrative embodiment shown in FIG. 15C, of a BSI image sensor havinga metal redistribution layer for providing solder bumps for connectingto external circuitry in later manufacturing stages in which aredistribution layer is added front side 101 of image wafer 102. In theexample of FIG. 16A, image wafer 102 already has backside imagingstructures such as microlenses 140 and color filters 142 on back side103. FIG. 16A shows addition of a first passivation layer such aspassivation layer 310 on top of permanent carrier 300. Passivation layer310 may be formed form any suitable permanent photo-definabledielectric. Permanent photo-definable dielectrics may be thermosettingdielectrics (i.e., dielectrics that cure upon application of heat).

Dielectric layer 310 may, as shown in FIG. 16A, be patterned so as tohave openings such as openings 314 over bond pads 104. In the samepatterning step, openings 314 may be extended into silicon carrier 310in order to expose bond pads 104.

As shown in FIG. 16B, a second passivation layer such as passivationlayer 312 may be added to sidewalls 316 of openings 314. Passivationlayer 312 may be a spin on dielectric, a chemical vapor depositeddielectric or other dielectric. Passivation layer 312 may be formed onsidewalls 316 of opening 314 by spinning on a dielectric then using aphoto-defining procedure to remove material from the bottom of openings314. If passivation layer 312 is not photo-definable, dielectricmaterial may be removed from the bottom of openings 314 using a dry etchprocess.

FIG. 17A shows a subsequent step in the formation of a RDL on front side101 of image wafer 102 already having BSI components such as microlenses140 and color filters 142 on back side 103. As shown in FIG. 17A, apatterned metallization layer such as metallization layer 320 may beformed over passivation layer 300. Metallization layer 320 may be formedfrom any suitable conductive material or combination of conductivematerials (e.g., titanium, copper, nickel, palladium etc.).Metallization layer 320 may be patterned to contact bond pads 104through openings 314 in dielectric layer 312 and silicon carrier 300forming through-silicon vias such as through-silicon vias 316.

As shown in FIG. 17B, a redistribution layer such as RDL 322 may includea third patterned dielectric layer such as dielectric layer 330 formedon top of dielectric layer 310 and metallization layer 320. Dielectriclayer 330 may be patterned having openings such as openings 324 thatprovide access to metallization layer 320 in order to provide electricalcontact bond pads 104. Openings 324 may provide electrical contacts in aredistributed pattern with respect to the pattern of bond pads 104(i.e., the location of openings 324 define where solder balls willultimately be placed). Third passivation layer 330 may have lightblocking properties (e.g., infrared absorption) in order to preventlight from front side 101 of image wafer 102 from reaching image pixels100. Passivation layer 330 may be formed from a single dielectricmaterial or may be made of multiple layers including a dry film laminatedielectric and a photo-definable infrared-blocking coating.

In the example of FIG. 17B, redistribution layer 322 includes firstpassivation layer 310, second dielectric passivation layer 312,metallization layer 320, and third passivation layer 330. RDL 322 mayinclude through-silicon vias 316 through silicon carrier 300.

FIG. 18A is cross-sectional side view of an illustrative BSI imagesensor having a metal redistribution layer for providing solder bumpsfor connecting to external circuitry in a later manufacturing stage. Asshown in FIG. 18A temporary carrier 600 may also be removed. Carrier 600may be removed by thermal shear de-bonding, mechanical twist de-bondingor other suitable de-bonding methods. Following removal of carrier 600,remaining adhesive 602 may be removed using, as an example, a chemicalsolvent (e.g., IPA and acetone).

FIG. 18B is cross-sectional side view of an illustrative BSI imagesensor having a metal redistribution layer for providing solder bumpsfor connecting to external circuitry in a final manufacturing stage.Following removal of carrier 600 and adhesive 602 as described inconnection with FIG. 18A, solder bumps 170 may, if desired, be attachedto BSI image sensor 900. BSI image sensor 900 may be provided withoutsolder balls 170 allowing a user of BSI image sensor 900 to form wirebonds, metal bonds or other electrical contacts in contact withmetallization layer 320 in openings 324. Attaching solder bumps 170 toimage sensor 900 may be performed by screen printing solder paste intoopenings 324 in dielectric layer 330 onto metallization layer 320.Solder bumps 170 are then formed by reflowing (i.e., heating untilmelted) the solder paste to form solder balls. Alternatively, solderballs may be formed in openings 114 using ball drop, solder shooting, orother solder deposition methods. The wafer is then singulated intoindividual dies. The completed backside illuminated image sensor 900having solder balls 170, is shown in the example of FIG. 18B.

In the final configuration shown (as an example) in FIG. 18B, BSI imagesensor 900 includes image wafer 102, permanent carrier 300,redistribution layer 322 and solder bumps 170. Image wafer 102 includescontrol circuitry and an array of image pixels 100 on a front side andan associated array of color filters 142 and an associated array ofmicrolenses 140 on a back side. Image light may be received throughmicrolenses 140 and color filters 142 on back side 103 of image wafer102 before being absorbed by image pixels 100 mounted on front side 101of image wafer 102. Behind image pixels 100, a redistribution layer suchas redistribution layer 322 may be mounted to front side 101 of imagewafer 102. Redistribution layer 322 may include dielectric layer 310,second dielectric layer 312, metallization layer 320 and thirddielectric layer 330. Dielectric layers 310, 312, and 330 may be formedfrom a dry film photo-resistive material, a spin-on photo-resistivematerial, or other suitable dielectric material. The example of FIG. 18Bis merely illustrative and other embodiments are possible.

FIG. 19 is a flowchart showing illustrative steps for producing BSIimage sensors having solder bumps and metal redistribution layers. Asshown in process 700 of FIG. 19, at step 701, a permanent carrier suchas carrier 300 of FIG. 14B may be attached to image wafer 102 usingadhesive layer 302. At step 702, the image wafer (silicon substrate) isback grinded to a desired thickness such as thickness 130 of FIG. 14C.At step 703, the image wafer may optionally be further thinned using asilicon wet etch. At step 704, a back side of the image wafer such asback side 103 of image wafer 102 of FIG. 14B is further prepared forbackside illumination of photosensors on front side 103 of image wafer102 using a standard BSI process. The BSI process of step 704 mayinclude forming a patterned light block material on back side 103 ofimage wafer 102 and opening alignment marks such as alignment marks 146of FIG. 15A.

Following BSI processing in step 704, at step 705 a color filter array(CFA) may be formed on back side 103 of image wafer 102. Microlensessuch as microlenses 140 of FIG. 15A may then be formed over the colorfilter array on back side 103 of image wafer 102 in a CFA/glens process.

At step 706, a temporary carrier such as carrier 600 may be attached toback side 103 of image wafer 102 using adhesive layer 602, as shown inFIG. 15B. At step 707, permanent carrier 300 is thinned as described inconnection with FIG. 7C. At step 708, openings such as openings 314 ofFIG. 16A are formed by photo-defining carrier 300 and, if desired, afirst passivation layer applied to carrier 300 such as passivation layer310 of FIG. 16A. Openings 314 may allow formation of through-siliconvias for connecting bond pads such as bond pads 104 of FIG. 16A to aredistribution layer in later steps. At step 709, as described inconnection with FIG. 16B, a second passivation layer such as passivationlayer 312 may be applied to sidewalls 316 of openings 314. At step 710,photo-definition or dry etching may be used to remove dielectric 312from the bottom of openings 314, exposing bond pads 104. At step 711, ametallization layer such as layer 320 of FIG. 17A may be formed ondielectric layer 310. At step 712, a third passivation layer such aspassivation layer 330 may be applied on top of metallization layer 320and dielectric layer 310. Passivation layer 330 may fill inthrough-silicon vias 316 and cover metallization layer 320 ofredistribution layer 322. At step 712, passivation layer 330 may also,if desired, be photo-defined to provide openings 324. At step 713temporary carrier 600 attached in step 706 may be removed using thermalshear or other de-bonding methods. At step 714, solder bumps such assolder bumps 170 of FIG. 18B may, if desired, be formed in openings 324in order to provide electrical contact with metallization layer 320 ofredistribution layer 322 and therefore with bond pads 104. At step 715,the image wafer is singulated into individual dies.

Various embodiments have been described illustrating for formingbackside illuminated image sensors having metal redistribution layersand solder bumps for connection to external circuitry. In oneembodiment, a BSI image sensor with RDL and solder bumps may be formedusing a temporary carrier during manufacture that is removed duringmanufacture. In another embodiment, a BSI image sensor with RDL andsolder bumps may be formed using a permanent carrier during manufacturethat partially remains in the final image sensor. BSI image sensors withRDL and solder bumps may be provided with microlens arrays and colorfilter arrays on a back side of an image wafer and image pixels on afront side of an image wafer. Embodiments are possible in which a BSIimage sensor is formed before formation of a redistribution layer on thefront side of the BSI image sensor. Other embodiments are possible inwhich a redistribution layer is formed on the front side of an imagewafer before formation of BSI components such as microlenses and colorfilters are formed on the back side of the image wafer. In someconfigurations, BSI image sensors with RDL's and solder bumps may beprovided with a cover glass over the microlens and color filter arrayson the front side of the image wafer. In other configurations, no coverlayer is provided.

The foregoing is merely illustrative of the principles of this inventionwhich can be practiced in other embodiments.

What is claimed is:
 1. An image sensor configured to capture imagelight, comprising: a semiconductor substrate having opposing first andsecond sides, wherein the first side includes an array of photosensitiveelements and associated control circuitry and wherein the second sideincludes an array of corresponding color filter elements, wherein theimage light reaches the photosensitive elements by passing through thecolor filter elements on the second side; bond pads on the first side ofthe semiconductor substrate; at least one dielectric layer havingopenings; and a patterned metallization layer that has portions in theopenings and portions that form contacts with the bond pads.
 2. Theimage sensor defined in claim 1, wherein the bond pads on the first sideof the semiconductor substrate interconnect the patterned metallizationlayer to the control circuitry on the first side of the semiconductorsubstrate.
 3. The image sensor defined in claim 2 further comprising aglass layer that is mounted over the second side.
 4. The image sensordefined in claim 3 further comprising a patterned film having an openingin which the array of color filter elements is located, wherein theglass layer is attached to the patterned film.
 5. The image sensordefined in claim 4 further comprising solder balls in contact with themetallization layer in the openings.
 6. The image sensor defined inclaim 1 further comprising an array of micolenses formed over the arrayof color filter elements.
 7. The image sensor defined in claim 1 furthercomprising a light blocking layer formed on the second side of thesemiconductor substrate adjacent to the array of color filter elements.8. The image sensor defined in claim 1 further comprising a permanentcarrier mounted on the semiconductor substrate.
 9. The image sensordefined in claim 8 wherein the patterned metallization layer and the atleast one dielectric layer form through-silicon vias in the permanentcarrier.
 10. The image sensor defined in claim 9 wherein thethrough-silicon vias form contacts with the bond pads.
 11. The imagesensor defined in claim 10, wherein the at least one dielectric layerforms sidewalls of the through-silicon vias.
 12. A method of forming animage sensor comprising: attaching a permanent carrier and asemiconductor substrate; forming through-silicon vias through thepermanent carrier; thinning the semiconductor substrate that is attachedto the permanent carrier in which the through-silicon vias have beenformed, wherein the thinned semiconductor substrate has opposing firstand second sides, wherein the permanent carrier is attached to the firstside; and forming an array of photosensitive elements and associatedcontrol circuitry on the first side and forming an array ofcorresponding color filter elements on the second side, wherein imagelight reaches the photosensitive elements by passing through the colorfilter elements on the second side.
 13. The method defined in claim 6further comprising: before forming the through-silicon vias through thepermanent carrier, thinning the permanent carrier.
 14. The methoddefined in claim 7, wherein forming the through silicon vias through thepermanent carrier comprises: forming a first dielectric layer on thepermanent carrier; forming at least one opening in the first dielectriclayer and the permanent carrier, wherein the at least one opening hassidewalls; forming a second dielectric layer on the sidewalls of the atleast one opening; and forming a metallization layer in the at least oneopening, wherein the metallization layer contacts a conductive bond padon a bottom surface of the opening, wherein the metallization layercovers the second dielectric layer on the sidewalls of the at least oneopening, and wherein the metallization layer covers at least a portionof the first dielectric layer.
 15. The method defined in claim 8,wherein forming the through silicon vias through the permanent carrierfurther comprises: after forming the metallization layer in the at leastone opening, forming a third dielectric layer in the at least oneopening, wherein the third dielectric layer covers at least a portion ofthe metallization layer, wherein the third dielectric layer covers atleast a second portion of the first dielectric layer not covered by themetallization layer, and wherein the third dielectric layer hasopenings.
 16. The method defined in claim 9 further comprising: beforethinning the semiconductor substrate that is attached to the permanentcarrier in which the through-silicon vias have been formed, attaching atemporary carrier to the third dielectric layer.
 17. The method definedin claim 10 further comprising forming solder balls in the openings inthe third dielectric layer, wherein the solder balls contact themetallization layer.
 18. The method defined in claim 11 furthercomprising: applying a dry film adhesive to the second side of thethinned semiconductor substrate on which the color filter elements havebeen formed; removing a portion of the dry film adhesive; attaching acover layer to a remaining portion of the dry film adhesive; anddetaching the temporary carrier from the third dielectric layer.
 19. Asystem, comprising: a central processing unit; memory; input-outputcircuitry; and an imaging device, wherein the imaging device comprises:a semiconductor substrate comprising an array of photosensitive elementsand an array of corresponding color filter elements; bond pads thatcontact the semiconductor substrate; a dielectric layer having openings;and a patterned metallization layer that has portions in the openingsand that contacts the bond pads.
 20. The system defined in claim 19,further comprising: a patterned film having an opening in which thearray of corresponding color filter elements is located; and a glasslayer that is mounted over the array of corresponding color filterelements and that is attached to the patterned film.